Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
600 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.39mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
EGP 1,143.30
EGP 114.33 Each (In a Pack of 10) (ex VAT)
Standard
10
EGP 1,143.30
EGP 114.33 Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
600 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.39mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details