Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
7.75 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
EGP 7.73
Each (On a Reel of 3000) (ex VAT)
3000
EGP 7.73
Each (On a Reel of 3000) (ex VAT)
3000
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
7.75 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Country of Origin
China