Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.: 796-5064Brand: ToshibaManufacturers Part No.: GT50JR22
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Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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EGP 542.20

EGP 542.20 Each (ex VAT)

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
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Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 542.20
2EGP 1,084.40
3EGP 1,626.60
4EGP 2,168.80
5EGP 2,711.00
6EGP 3,253.20
7EGP 3,795.40
8EGP 4,337.60
9EGP 4,879.80
10EGP 5,422.00
11EGP 5,964.20
12EGP 6,506.40
13EGP 7,048.60
14EGP 7,590.80
15EGP 8,133.00

EGP 542.20

EGP 542.20 Each (ex VAT)

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 542.20
2EGP 1,084.40
3EGP 1,626.60
4EGP 2,168.80
5EGP 2,711.00
6EGP 3,253.20
7EGP 3,795.40
8EGP 4,337.60
9EGP 4,879.80
10EGP 5,422.00
11EGP 5,964.20
12EGP 6,506.40
13EGP 7,048.60
14EGP 7,590.80
15EGP 8,133.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more