Technical Document
Specifications
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
Country of Origin
Philippines
Product details
Transistor Arrays, Intersil
Complete isolation between transistors
Bipolar Transistors, Intersil
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EGP 430.27
Each (In a Tube of 48) (ex VAT)
48
EGP 430.27
Each (In a Tube of 48) (ex VAT)
48
Technical Document
Specifications
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
Country of Origin
Philippines
Product details
Transistor Arrays, Intersil
Complete isolation between transistors