onsemi MMBF4393LT1G N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23

RS Stock No.: 864-7846Brand: onsemiManufacturers Part No.: MMBF4393LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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EGP 20.19

Each (In a Pack of 50) (ex VAT)

onsemi MMBF4393LT1G N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50EGP 1,009.50
100EGP 2,019.00
150EGP 3,028.50
200EGP 4,038.00
250EGP 5,047.50
300EGP 6,057.00
350EGP 7,066.50
400EGP 8,076.00
450EGP 9,085.50
500EGP 10,095.00
550EGP 11,104.50
600EGP 12,114.00
650EGP 13,123.50
700EGP 14,133.00
750EGP 15,142.50

EGP 20.19

Each (In a Pack of 50) (ex VAT)

onsemi MMBF4393LT1G N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50EGP 1,009.50
100EGP 2,019.00
150EGP 3,028.50
200EGP 4,038.00
250EGP 5,047.50
300EGP 6,057.00
350EGP 7,066.50
400EGP 8,076.00
450EGP 9,085.50
500EGP 10,095.00
550EGP 11,104.50
600EGP 12,114.00
650EGP 13,123.50
700EGP 14,133.00
750EGP 15,142.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more