Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Package Type
AG-EASY1B-2
Series
F4
Mounting Type
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
EGP 15,343.77
Each (ex VAT)
SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Select packaging type
Standard
1
EGP 15,343.77
Each (ex VAT)
SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Stock information temporarily unavailable.
Select packaging type
Standard
1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Package Type
AG-EASY1B-2
Series
F4
Mounting Type
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC