Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
Production pack (Reel)
100
P.O.A.
Production pack (Reel)
100
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Product details