DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 182-6868Brand: DiodesZetexManufacturers Part No.: DGTD120T25S1PT
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Technical Document

Specifications

Brand

DiodesZetex

Maximum Continuous Collector Current

50 A, 100 (Pulsed) A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

348 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.31 x 21.46mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3942pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

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EGP 548.96

Each (On a Reel of 30) (ex VAT)

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

30

Available in multiples of 30
30EGP 16,468.80
60EGP 32,937.60
90EGP 49,406.40
120EGP 65,875.20
150EGP 82,344.00
180EGP 98,812.80
210EGP 115,281.60
240EGP 131,750.40
270EGP 148,219.20
300EGP 164,688.00
330EGP 181,156.80
360EGP 197,625.60
390EGP 214,094.40
420EGP 230,563.20
450EGP 247,032.00

EGP 548.96

Each (On a Reel of 30) (ex VAT)

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 16,468.80
60EGP 32,937.60
90EGP 49,406.40
120EGP 65,875.20
150EGP 82,344.00
180EGP 98,812.80
210EGP 115,281.60
240EGP 131,750.40
270EGP 148,219.20
300EGP 164,688.00
330EGP 181,156.80
360EGP 197,625.60
390EGP 214,094.40
420EGP 230,563.20
450EGP 247,032.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

DiodesZetex

Maximum Continuous Collector Current

50 A, 100 (Pulsed) A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

348 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.31 x 21.46mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3942pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more