Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
EGP 118,800.00
EGP 39.60 Each (On a Reel of 3000) (ex VAT)
3000
EGP 118,800.00
EGP 39.60 Each (On a Reel of 3000) (ex VAT)
3000
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm