Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

RS Stock No.: 228-2909Brand: VishayManufacturers Part No.: SiR681DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

EGP 351,960.00

EGP 117.32 Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

3000

Available in multiples of 3000
3000EGP 351,960.00
6000EGP 703,920.00
9000EGP 1,055,880.00
12000EGP 1,407,840.00
15000EGP 1,759,800.00
18000EGP 2,111,760.00
21000EGP 2,463,720.00
24000EGP 2,815,680.00
27000EGP 3,167,640.00
30000EGP 3,519,600.00
33000EGP 3,871,560.00
36000EGP 4,223,520.00
39000EGP 4,575,480.00
42000EGP 4,927,440.00
45000EGP 5,279,400.00

EGP 351,960.00

EGP 117.32 Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000EGP 351,960.00
6000EGP 703,920.00
9000EGP 1,055,880.00
12000EGP 1,407,840.00
15000EGP 1,759,800.00
18000EGP 2,111,760.00
21000EGP 2,463,720.00
24000EGP 2,815,680.00
27000EGP 3,167,640.00
30000EGP 3,519,600.00
33000EGP 3,871,560.00
36000EGP 4,223,520.00
39000EGP 4,575,480.00
42000EGP 4,927,440.00
45000EGP 5,279,400.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more