Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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EGP 934.70
EGP 93.47 Each (In a Pack of 10) (ex VAT)
Standard
10
EGP 934.70
EGP 93.47 Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products