Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
850 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.184 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
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P.O.A.
Each (In a Tube of 25) (ex VAT)
25
P.O.A.
Each (In a Tube of 25) (ex VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
850 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.184 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products