Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220PBF

RS Stock No.: 540-9698Brand: VishayManufacturers Part No.: IRFR9220PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

6.22mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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onsemi P-Channel MOSFET, 5.7 A, 200 V, 3-Pin DPAK FQD7P20TM
EGP 98.18Each (In a Pack of 5) (ex VAT)

EGP 121.28

EGP 121.28 Each (ex VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220PBF

EGP 121.28

EGP 121.28 Each (ex VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220PBF

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi P-Channel MOSFET, 5.7 A, 200 V, 3-Pin DPAK FQD7P20TM
EGP 98.18Each (In a Pack of 5) (ex VAT)

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

6.22mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi P-Channel MOSFET, 5.7 A, 200 V, 3-Pin DPAK FQD7P20TM
EGP 98.18Each (In a Pack of 5) (ex VAT)