Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

RS Stock No.: 180-8316Brand: VishayManufacturers Part No.: IRFBE30LPBF
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Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

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Stock information temporarily unavailable.

EGP 6,574.00

EGP 131.48 Each (In a Tube of 50) (ex VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

EGP 6,574.00

EGP 131.48 Each (In a Tube of 50) (ex VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more