Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3

RS Stock No.: 178-3851PBrand: Vishay SiliconixManufacturers Part No.: SQS966ENW-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

3.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

3.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more