Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

RS Stock No.: 178-3720Brand: Vishay SiliconixManufacturers Part No.: SQJ504EP-T1_GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

EGP 154,110.00

EGP 51.37 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

3000

Available in multiples of 3000
3000EGP 154,110.00
6000EGP 308,220.00
9000EGP 462,330.00
12000EGP 616,440.00
15000EGP 770,550.00
18000EGP 924,660.00
21000EGP 1,078,770.00
24000EGP 1,232,880.00
27000EGP 1,386,990.00
30000EGP 1,541,100.00
33000EGP 1,695,210.00
36000EGP 1,849,320.00
39000EGP 2,003,430.00
42000EGP 2,157,540.00
45000EGP 2,311,650.00

EGP 154,110.00

EGP 51.37 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000EGP 154,110.00
6000EGP 308,220.00
9000EGP 462,330.00
12000EGP 616,440.00
15000EGP 770,550.00
18000EGP 924,660.00
21000EGP 1,078,770.00
24000EGP 1,232,880.00
27000EGP 1,386,990.00
30000EGP 1,541,100.00
33000EGP 1,695,210.00
36000EGP 1,849,320.00
39000EGP 2,003,430.00
42000EGP 2,157,540.00
45000EGP 2,311,650.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more