Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

RS Stock No.: 178-3893PBrand: Vishay SiliconixManufacturers Part No.: SQJ504EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5.99mm

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
Select packaging type

Production pack (Reel)

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Available in multiples of 10.

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Available in multiples of 10.

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10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5.99mm

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more