N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7190ADP-T1-RE3

RS Stock No.: 178-3665Brand: Vishay SiliconixManufacturers Part No.: Si7190ADP-T1-RE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.4 A

Maximum Drain Source Voltage

250 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

14.9 nC @ 10 V

Width

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Country of Origin

China

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EGP 260,130.00

EGP 86.71 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7190ADP-T1-RE3

3000

Available in multiples of 3000
3000EGP 260,130.00
6000EGP 520,260.00
9000EGP 780,390.00
12000EGP 1,040,520.00
15000EGP 1,300,650.00
18000EGP 1,560,780.00
21000EGP 1,820,910.00
24000EGP 2,081,040.00
27000EGP 2,341,170.00
30000EGP 2,601,300.00
33000EGP 2,861,430.00
36000EGP 3,121,560.00
39000EGP 3,381,690.00
42000EGP 3,641,820.00
45000EGP 3,901,950.00

EGP 260,130.00

EGP 86.71 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7190ADP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000EGP 260,130.00
6000EGP 520,260.00
9000EGP 780,390.00
12000EGP 1,040,520.00
15000EGP 1,300,650.00
18000EGP 1,560,780.00
21000EGP 1,820,910.00
24000EGP 2,081,040.00
27000EGP 2,341,170.00
30000EGP 2,601,300.00
33000EGP 2,861,430.00
36000EGP 3,121,560.00
39000EGP 3,381,690.00
42000EGP 3,641,820.00
45000EGP 3,901,950.00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.4 A

Maximum Drain Source Voltage

250 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

14.9 nC @ 10 V

Width

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more