Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S

RS Stock No.: 133-2804Brand: ToshibaManufacturers Part No.: TK8P60W5,RVQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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EGP 721.80

EGP 72.18 Each (In a Pack of 10) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S

10

Available in multiples of 10
10EGP 721.80
20EGP 1,443.60
30EGP 2,165.40
40EGP 2,887.20
50EGP 3,609.00
60EGP 4,330.80
70EGP 5,052.60
80EGP 5,774.40
90EGP 6,496.20
100EGP 7,218.00
110EGP 7,939.80
120EGP 8,661.60
130EGP 9,383.40
140EGP 10,105.20
150EGP 10,827.00

EGP 721.80

EGP 72.18 Each (In a Pack of 10) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S

Stock information temporarily unavailable.

10

Available in multiples of 10
10EGP 721.80
20EGP 1,443.60
30EGP 2,165.40
40EGP 2,887.20
50EGP 3,609.00
60EGP 4,330.80
70EGP 5,052.60
80EGP 5,774.40
90EGP 6,496.20
100EGP 7,218.00
110EGP 7,939.80
120EGP 8,661.60
130EGP 9,383.40
140EGP 10,105.20
150EGP 10,827.00

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more