Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

RS Stock No.: 125-0591Brand: ToshibaManufacturers Part No.: TK72E08N1,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

192 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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EGP 585.40

EGP 117.08 Each (In a Pack of 5) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

5

Available in multiples of 5
5EGP 585.40
10EGP 1,170.80
15EGP 1,756.20
20EGP 2,341.60
25EGP 2,927.00
30EGP 3,512.40
35EGP 4,097.80
40EGP 4,683.20
45EGP 5,268.60
50EGP 5,854.00
55EGP 6,439.40
60EGP 7,024.80
65EGP 7,610.20
70EGP 8,195.60
75EGP 8,781.00

EGP 585.40

EGP 117.08 Each (In a Pack of 5) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5EGP 585.40
10EGP 1,170.80
15EGP 1,756.20
20EGP 2,341.60
25EGP 2,927.00
30EGP 3,512.40
35EGP 4,097.80
40EGP 4,683.20
45EGP 5,268.60
50EGP 5,854.00
55EGP 6,439.40
60EGP 7,024.80
65EGP 7,610.20
70EGP 8,195.60
75EGP 8,781.00

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

192 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more