Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

RS Stock No.: 125-0563Brand: ToshibaManufacturers Part No.: TK31E60X,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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EGP 617.64

EGP 308.82 Each (In a Pack of 2) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

2

Available in multiples of 2
2EGP 617.64
4EGP 1,235.28
6EGP 1,852.92
8EGP 2,470.56
10EGP 3,088.20
12EGP 3,705.84
14EGP 4,323.48
16EGP 4,941.12
18EGP 5,558.76
20EGP 6,176.40
22EGP 6,794.04
24EGP 7,411.68
26EGP 8,029.32
28EGP 8,646.96
30EGP 9,264.60

EGP 617.64

EGP 308.82 Each (In a Pack of 2) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

Stock information temporarily unavailable.

2

Available in multiples of 2
2EGP 617.64
4EGP 1,235.28
6EGP 1,852.92
8EGP 2,470.56
10EGP 3,088.20
12EGP 3,705.84
14EGP 4,323.48
16EGP 4,941.12
18EGP 5,558.76
20EGP 6,176.40
22EGP 6,794.04
24EGP 7,411.68
26EGP 8,029.32
28EGP 8,646.96
30EGP 9,264.60

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more