Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

RS Stock No.: 827-6179Brand: ToshibaManufacturers Part No.: TK30A06N1,S4X(S
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

EGP 727.70

EGP 72.77 Each (In a Pack of 10) (ex VAT)

Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 727.70
20EGP 1,455.40
30EGP 2,183.10
40EGP 2,910.80
50EGP 3,638.50
60EGP 4,366.20
70EGP 5,093.90
80EGP 5,821.60
90EGP 6,549.30
100EGP 7,277.00
110EGP 8,004.70
120EGP 8,732.40
130EGP 9,460.10
140EGP 10,187.80
150EGP 10,915.50

EGP 727.70

EGP 72.77 Each (In a Pack of 10) (ex VAT)

Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 727.70
20EGP 1,455.40
30EGP 2,183.10
40EGP 2,910.80
50EGP 3,638.50
60EGP 4,366.20
70EGP 5,093.90
80EGP 5,821.60
90EGP 6,549.30
100EGP 7,277.00
110EGP 8,004.70
120EGP 8,732.40
130EGP 9,460.10
140EGP 10,187.80
150EGP 10,915.50

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more