Toshiba Silicon N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2e+008 Ω
Maximum Gate Threshold Voltage
1.2V
Number of Elements per Chip
1
Transistor Material
Silicon
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EGP 584.00
EGP 5.84 Each (In a Pack of 100) (ex VAT)
Standard
100
EGP 584.00
EGP 5.84 Each (In a Pack of 100) (ex VAT)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2e+008 Ω
Maximum Gate Threshold Voltage
1.2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products