Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Country of Origin
Thailand
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EGP 7.44
Each (On a Reel of 3000) (ex VAT)
3000
EGP 7.44
Each (On a Reel of 3000) (ex VAT)
3000
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Country of Origin
Thailand