Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

RS Stock No.: 760-3126Brand: ToshibaManufacturers Part No.: 2SK209-Y(TE85L,F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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EGP 33.94

Each (In a Pack of 10) (ex VAT)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 339.40
20EGP 678.80
30EGP 1,018.20
40EGP 1,357.60
50EGP 1,697.00
60EGP 2,036.40
70EGP 2,375.80
80EGP 2,715.20
90EGP 3,054.60
100EGP 3,394.00
110EGP 3,733.40
120EGP 4,072.80
130EGP 4,412.20
140EGP 4,751.60
150EGP 5,091.00

EGP 33.94

Each (In a Pack of 10) (ex VAT)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 339.40
20EGP 678.80
30EGP 1,018.20
40EGP 1,357.60
50EGP 1,697.00
60EGP 2,036.40
70EGP 2,375.80
80EGP 2,715.20
90EGP 3,054.60
100EGP 3,394.00
110EGP 3,733.40
120EGP 4,072.80
130EGP 4,412.20
140EGP 4,751.60
150EGP 5,091.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more