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Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

RS Stock No.: 601-1905Brand: ToshibaManufacturers Part No.: 2SJ305(F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

30 V

Series

2SJ

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

EGP 320.60

EGP 32.06 Each (In a Pack of 10) (ex VAT)

Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

10

Available in multiples of 10
10EGP 320.60
20EGP 641.20
30EGP 961.80
40EGP 1,282.40
50EGP 1,603.00
60EGP 1,923.60
70EGP 2,244.20
80EGP 2,564.80
90EGP 2,885.40
100EGP 3,206.00
110EGP 3,526.60
120EGP 3,847.20
130EGP 4,167.80
140EGP 4,488.40
150EGP 4,809.00

EGP 320.60

EGP 32.06 Each (In a Pack of 10) (ex VAT)

Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)
Stock information temporarily unavailable.

10

Available in multiples of 10
10EGP 320.60
20EGP 641.20
30EGP 961.80
40EGP 1,282.40
50EGP 1,603.00
60EGP 1,923.60
70EGP 2,244.20
80EGP 2,564.80
90EGP 2,885.40
100EGP 3,206.00
110EGP 3,526.60
120EGP 3,847.20
130EGP 4,167.80
140EGP 4,488.40
150EGP 4,809.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

30 V

Series

2SJ

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more