Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
EGP 203.66
EGP 203.66 Each (ex VAT)
1
EGP 203.66
EGP 203.66 Each (ex VAT)
1
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Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details