Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
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EGP 33.37
Each (In a Pack of 25) (ex VAT)
25
EGP 33.37
Each (In a Pack of 25) (ex VAT)
25
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details