Toshiba 2SC3324-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

RS Stock No.: 890-2648Brand: ToshibaManufacturers Part No.: 2SC3324-GR(TE85L,F
brand-logo
View all in Bipolar Transistors

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

120 V

Package Type

SOT-346 (SC-59)

Mounting Type

Surface Mount

Maximum Power Dissipation

150 mW

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

120 V

Maximum Emitter Base Voltage

120 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Country of Origin

Japan

Product details

Small Signal NPN Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Toshiba 2SC3324-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

P.O.A.

Toshiba 2SC3324-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

120 V

Package Type

SOT-346 (SC-59)

Mounting Type

Surface Mount

Maximum Power Dissipation

150 mW

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

120 V

Maximum Emitter Base Voltage

120 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Country of Origin

Japan

Product details

Small Signal NPN Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more