Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

RS Stock No.: 531-9315Brand: ToshibaManufacturers Part No.: 2SC2712-Y(F)
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

150 mA

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-346 (SC-59)

Mounting Type

Surface Mount

Maximum Power Dissipation

150 mW

Minimum DC Current Gain

70

Transistor Configuration

Single

Maximum Collector Base Voltage

60 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

80 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Dimensions

1.1 x 2.9 x 1.5mm

Country of Origin

Japan

Product details

RF Bipolar Transistors, Toshiba

Bipolar Transistors, Toshiba

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Stock information temporarily unavailable.

EGP 100.30

EGP 10.03 Each (In a Pack of 10) (ex VAT)

Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

10

Available in multiples of 10
10EGP 100.30
20EGP 200.60
30EGP 300.90
40EGP 401.20
50EGP 501.50
60EGP 601.80
70EGP 702.10
80EGP 802.40
90EGP 902.70
100EGP 1,003.00
110EGP 1,103.30
120EGP 1,203.60
130EGP 1,303.90
140EGP 1,404.20
150EGP 1,504.50

EGP 100.30

EGP 10.03 Each (In a Pack of 10) (ex VAT)

Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346
Stock information temporarily unavailable.

10

Available in multiples of 10
10EGP 100.30
20EGP 200.60
30EGP 300.90
40EGP 401.20
50EGP 501.50
60EGP 601.80
70EGP 702.10
80EGP 802.40
90EGP 902.70
100EGP 1,003.00
110EGP 1,103.30
120EGP 1,203.60
130EGP 1,303.90
140EGP 1,404.20
150EGP 1,504.50

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum DC Collector Current

150 mA

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-346 (SC-59)

Mounting Type

Surface Mount

Maximum Power Dissipation

150 mW

Minimum DC Current Gain

70

Transistor Configuration

Single

Maximum Collector Base Voltage

60 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

80 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Dimensions

1.1 x 2.9 x 1.5mm

Country of Origin

Japan

Product details

RF Bipolar Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more