Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-50 V
Package Type
PW Mini
Mounting Type
Surface Mount
Maximum Power Dissipation
1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.5mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
General Purpose PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
EGP 296.80
EGP 29.68 Each (In a Pack of 10) (ex VAT)
10
EGP 296.80
EGP 29.68 Each (In a Pack of 10) (ex VAT)
10
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Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-50 V
Package Type
PW Mini
Mounting Type
Surface Mount
Maximum Power Dissipation
1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.5mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details