N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

RS Stock No.: 145-1334Brand: Texas InstrumentsManufacturers Part No.: CSD19534KCS
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Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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EGP 5,053.50

EGP 101.07 Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

50

Available in multiples of 50
50EGP 5,053.50
100EGP 10,107.00
150EGP 15,160.50
200EGP 20,214.00
250EGP 25,267.50
300EGP 30,321.00
350EGP 35,374.50
400EGP 40,428.00
450EGP 45,481.50
500EGP 50,535.00
550EGP 55,588.50
600EGP 60,642.00
650EGP 65,695.50
700EGP 70,749.00
750EGP 75,802.50

EGP 5,053.50

EGP 101.07 Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Stock information temporarily unavailable.

50

Available in multiples of 50
50EGP 5,053.50
100EGP 10,107.00
150EGP 15,160.50
200EGP 20,214.00
250EGP 25,267.50
300EGP 30,321.00
350EGP 35,374.50
400EGP 40,428.00
450EGP 45,481.50
500EGP 50,535.00
550EGP 55,588.50
600EGP 60,642.00
650EGP 65,695.50
700EGP 70,749.00
750EGP 75,802.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more