Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Transistor Material
Si
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
3.4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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EGP 43.83
Each (On a Reel of 2500) (ex VAT)
2500
EGP 43.83
Each (On a Reel of 2500) (ex VAT)
2500
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Transistor Material
Si
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
3.4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details