N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G

RS Stock No.: 171-3632Brand: Taiwan SemiconductorManufacturers Part No.: TSM60NB260CI C0G
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Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Package Type

ITO-220S

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

32.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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EGP 151.78

Each (On a Reel of 1000) (ex VAT)

N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G

1000

Available in multiples of 1000
1000EGP 151,780.00
2000EGP 303,560.00
3000EGP 455,340.00
4000EGP 607,120.00
5000EGP 758,900.00
6000EGP 910,680.00
7000EGP 1,062,460.00
8000EGP 1,214,240.00
9000EGP 1,366,020.00
10000EGP 1,517,800.00
11000EGP 1,669,580.00
12000EGP 1,821,360.00
13000EGP 1,973,140.00
14000EGP 2,124,920.00
15000EGP 2,276,700.00

EGP 151.78

Each (On a Reel of 1000) (ex VAT)

N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 151,780.00
2000EGP 303,560.00
3000EGP 455,340.00
4000EGP 607,120.00
5000EGP 758,900.00
6000EGP 910,680.00
7000EGP 1,062,460.00
8000EGP 1,214,240.00
9000EGP 1,366,020.00
10000EGP 1,517,800.00
11000EGP 1,669,580.00
12000EGP 1,821,360.00
13000EGP 1,973,140.00
14000EGP 2,124,920.00
15000EGP 2,276,700.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Package Type

ITO-220S

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

32.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more