Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
420 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
1050 V
Maximum Emitter Base Voltage
15 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.55 x 4.65 x 16.07mm
Country of Origin
Taiwan, Province Of China
Product details
High Voltage NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
P.O.A.
Each (In a Tube of 50) (ex VAT)
50
P.O.A.
Each (In a Tube of 50) (ex VAT)
50
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Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
420 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
1050 V
Maximum Emitter Base Voltage
15 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.55 x 4.65 x 16.07mm
Country of Origin
Taiwan, Province Of China
Product details