STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

RS Stock No.: 168-8929Brand: STMicroelectronicsManufacturers Part No.: STY145N65M5
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

138 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

5.3mm

Length

15.9mm

Typical Gate Charge @ Vgs

414 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20.3mm

Forward Diode Voltage

1.5V

Country of Origin

China

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

EGP 116,631.00

EGP 3,887.70 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

30

Available in multiples of 30
30EGP 116,631.00
60EGP 233,262.00
90EGP 349,893.00
120EGP 466,524.00
150EGP 583,155.00
180EGP 699,786.00
210EGP 816,417.00
240EGP 933,048.00
270EGP 1,049,679.00
300EGP 1,166,310.00
330EGP 1,282,941.00
360EGP 1,399,572.00
390EGP 1,516,203.00
420EGP 1,632,834.00
450EGP 1,749,465.00

EGP 116,631.00

EGP 3,887.70 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5
Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 116,631.00
60EGP 233,262.00
90EGP 349,893.00
120EGP 466,524.00
150EGP 583,155.00
180EGP 699,786.00
210EGP 816,417.00
240EGP 933,048.00
270EGP 1,049,679.00
300EGP 1,166,310.00
330EGP 1,282,941.00
360EGP 1,399,572.00
390EGP 1,516,203.00
420EGP 1,632,834.00
450EGP 1,749,465.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

138 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

5.3mm

Length

15.9mm

Typical Gate Charge @ Vgs

414 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20.3mm

Forward Diode Voltage

1.5V

Country of Origin

China

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more