SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
EGP 347.12
Each (In a Tube of 50) (ex VAT)
50
EGP 347.12
Each (In a Tube of 50) (ex VAT)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products