STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

RS Stock No.: 206-6067Brand: STMicroelectronicsManufacturers Part No.: STO67N60DM6
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

600 V

Series

STO67N60DM6

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

25V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

EGP 833,796.00

EGP 463.22 Each (On a Reel of 1800) (ex VAT)

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

1800

Available in multiples of 1800
1800EGP 833,796.00
3600EGP 1,667,592.00
5400EGP 2,501,388.00
7200EGP 3,335,184.00
9000EGP 4,168,980.00
10800EGP 5,002,776.00
12600EGP 5,836,572.00
14400EGP 6,670,368.00
16200EGP 7,504,164.00
18000EGP 8,337,960.00
19800EGP 9,171,756.00
21600EGP 10,005,552.00
23400EGP 10,839,348.00
25200EGP 11,673,144.00
27000EGP 12,506,940.00

EGP 833,796.00

EGP 463.22 Each (On a Reel of 1800) (ex VAT)

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6
Stock information temporarily unavailable.

1800

Available in multiples of 1800
1800EGP 833,796.00
3600EGP 1,667,592.00
5400EGP 2,501,388.00
7200EGP 3,335,184.00
9000EGP 4,168,980.00
10800EGP 5,002,776.00
12600EGP 5,836,572.00
14400EGP 6,670,368.00
16200EGP 7,504,164.00
18000EGP 8,337,960.00
19800EGP 9,171,756.00
21600EGP 10,005,552.00
23400EGP 10,839,348.00
25200EGP 11,673,144.00
27000EGP 12,506,940.00

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

600 V

Series

STO67N60DM6

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

25V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more