STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z

RS Stock No.: 714-1076PBrand: STMicroelectronicsManufacturers Part No.: STN1NK80Z
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

3.5mm

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

3.5mm

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more