STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3

RS Stock No.: 907-4744Brand: STMicroelectronicsManufacturers Part No.: STL8N10LF3
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

STripFET F3

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.15mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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EGP 1,242.40

EGP 124.24 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 1,242.40
20EGP 2,484.80
30EGP 3,727.20
40EGP 4,969.60
50EGP 6,212.00
60EGP 7,454.40
70EGP 8,696.80
80EGP 9,939.20
90EGP 11,181.60
100EGP 12,424.00
110EGP 13,666.40
120EGP 14,908.80
130EGP 16,151.20
140EGP 17,393.60
150EGP 18,636.00

EGP 1,242.40

EGP 124.24 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 1,242.40
20EGP 2,484.80
30EGP 3,727.20
40EGP 4,969.60
50EGP 6,212.00
60EGP 7,454.40
70EGP 8,696.80
80EGP 9,939.20
90EGP 11,181.60
100EGP 12,424.00
110EGP 13,666.40
120EGP 14,908.80
130EGP 16,151.20
140EGP 17,393.60
150EGP 18,636.00

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

STripFET F3

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.15mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more