STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

RS Stock No.: 719-651Brand: STMicroelectronicsManufacturers Part No.: STH345N6F7-2
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Country of Origin

China

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Stock information temporarily unavailable.

EGP 257,000.00

EGP 257.00 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

1000

Available in multiples of 1000
1000EGP 257,000.00
2000EGP 514,000.00
3000EGP 771,000.00
4000EGP 1,028,000.00
5000EGP 1,285,000.00
6000EGP 1,542,000.00
7000EGP 1,799,000.00
8000EGP 2,056,000.00
9000EGP 2,313,000.00
10000EGP 2,570,000.00
11000EGP 2,827,000.00
12000EGP 3,084,000.00
13000EGP 3,341,000.00
14000EGP 3,598,000.00
15000EGP 3,855,000.00

EGP 257,000.00

EGP 257.00 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 257,000.00
2000EGP 514,000.00
3000EGP 771,000.00
4000EGP 1,028,000.00
5000EGP 1,285,000.00
6000EGP 1,542,000.00
7000EGP 1,799,000.00
8000EGP 2,056,000.00
9000EGP 2,313,000.00
10000EGP 2,570,000.00
11000EGP 2,827,000.00
12000EGP 3,084,000.00
13000EGP 3,341,000.00
14000EGP 3,598,000.00
15000EGP 3,855,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more