STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60

RS Stock No.: 103-1568Brand: STMicroelectronicsManufacturers Part No.: STE40NC60
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Typical Gate Charge @ Vgs

307.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

EGP 94,301.00

EGP 9,430.10 Each (In a Tube of 10) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60

10

Available in multiples of 10
10EGP 94,301.00
20EGP 188,602.00
30EGP 282,903.00
40EGP 377,204.00
50EGP 471,505.00
60EGP 565,806.00
70EGP 660,107.00
80EGP 754,408.00
90EGP 848,709.00
100EGP 943,010.00
110EGP 1,037,311.00
120EGP 1,131,612.00
130EGP 1,225,913.00
140EGP 1,320,214.00
150EGP 1,414,515.00

EGP 94,301.00

EGP 9,430.10 Each (In a Tube of 10) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60
Stock information temporarily unavailable.

10

Available in multiples of 10
10EGP 94,301.00
20EGP 188,602.00
30EGP 282,903.00
40EGP 377,204.00
50EGP 471,505.00
60EGP 565,806.00
70EGP 660,107.00
80EGP 754,408.00
90EGP 848,709.00
100EGP 943,010.00
110EGP 1,037,311.00
120EGP 1,131,612.00
130EGP 1,225,913.00
140EGP 1,320,214.00
150EGP 1,414,515.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Typical Gate Charge @ Vgs

307.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more