STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

RS Stock No.: 151-952Brand: STMicroelectronicsManufacturers Part No.: STD13NM60N
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

MDmesh II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

6.6 mm

Height

2.4mm

Length

10.1mm

Standards/Approvals

RoHS

Automotive Standard

No

Country of Origin

China

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Stock information temporarily unavailable.

EGP 1,070.00

EGP 214.00 Each (Supplied as a Tape) (ex VAT)

STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 1,070.00
10EGP 2,140.00
15EGP 3,210.00
20EGP 4,280.00
25EGP 5,350.00
30EGP 6,420.00
35EGP 7,490.00
40EGP 8,560.00
45EGP 9,630.00
50EGP 10,700.00
55EGP 11,770.00
60EGP 12,840.00
65EGP 13,910.00
70EGP 14,980.00
75EGP 16,050.00

EGP 1,070.00

EGP 214.00 Each (Supplied as a Tape) (ex VAT)

STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 1,070.00
10EGP 2,140.00
15EGP 3,210.00
20EGP 4,280.00
25EGP 5,350.00
30EGP 6,420.00
35EGP 7,490.00
40EGP 8,560.00
45EGP 9,630.00
50EGP 10,700.00
55EGP 11,770.00
60EGP 12,840.00
65EGP 13,910.00
70EGP 14,980.00
75EGP 16,050.00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

MDmesh II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

6.6 mm

Height

2.4mm

Length

10.1mm

Standards/Approvals

RoHS

Automotive Standard

No

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more