Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.5nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Product Details
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Stock information temporarily unavailable.
EGP 265,000.00
EGP 106.00 Each (On a Reel of 2500) (ex VAT)
2500
EGP 265,000.00
EGP 106.00 Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.5nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Product Details
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.