STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263

RS Stock No.: 165-6855Brand: STMicroelectronicsManufacturers Part No.: STB60NF06LT4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

15 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

EGP 118,620.00

EGP 118.62 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263

1000

Available in multiples of 1000
1000EGP 118,620.00
2000EGP 237,240.00
3000EGP 355,860.00
4000EGP 474,480.00
5000EGP 593,100.00
6000EGP 711,720.00
7000EGP 830,340.00
8000EGP 948,960.00
9000EGP 1,067,580.00
10000EGP 1,186,200.00
11000EGP 1,304,820.00
12000EGP 1,423,440.00
13000EGP 1,542,060.00
14000EGP 1,660,680.00
15000EGP 1,779,300.00

EGP 118,620.00

EGP 118.62 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 118,620.00
2000EGP 237,240.00
3000EGP 355,860.00
4000EGP 474,480.00
5000EGP 593,100.00
6000EGP 711,720.00
7000EGP 830,340.00
8000EGP 948,960.00
9000EGP 1,067,580.00
10000EGP 1,186,200.00
11000EGP 1,304,820.00
12000EGP 1,423,440.00
13000EGP 1,542,060.00
14000EGP 1,660,680.00
15000EGP 1,779,300.00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

15 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more