STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2

RS Stock No.: 111-6459Brand: STMicroelectronicsManufacturers Part No.: STB18N60DM2
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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

10.4 mm

Height

4.6mm

Length

9.35mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

EGP 1,237.20

EGP 247.44 Each (In a Pack of 5) (ex VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2
Select packaging type

EGP 1,237.20

EGP 247.44 Each (In a Pack of 5) (ex VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2

Stock information temporarily unavailable.

Select packaging type

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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

10.4 mm

Height

4.6mm

Length

9.35mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more