STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

RS Stock No.: 204-3957Brand: STMicroelectronicsManufacturers Part No.: SCTWA35N65G2V
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

EGP 38,766.00

EGP 1,292.20 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

30

Available in multiples of 30
30EGP 38,766.00
60EGP 77,532.00
90EGP 116,298.00
120EGP 155,064.00
150EGP 193,830.00
180EGP 232,596.00
210EGP 271,362.00
240EGP 310,128.00
270EGP 348,894.00
300EGP 387,660.00
330EGP 426,426.00
360EGP 465,192.00
390EGP 503,958.00
420EGP 542,724.00
450EGP 581,490.00

EGP 38,766.00

EGP 1,292.20 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 38,766.00
60EGP 77,532.00
90EGP 116,298.00
120EGP 155,064.00
150EGP 193,830.00
180EGP 232,596.00
210EGP 271,362.00
240EGP 310,128.00
270EGP 348,894.00
300EGP 387,660.00
330EGP 426,426.00
360EGP 465,192.00
390EGP 503,958.00
420EGP 542,724.00
450EGP 581,490.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more