STMicroelectronics SCT SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

RS Stock No.: 202-5491Brand: STMicroelectronicsManufacturers Part No.: SCTWA20N120
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.189 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

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EGP 38,894.70

EGP 1,296.49 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

30

Available in multiples of 30
30EGP 38,894.70
60EGP 77,789.40
90EGP 116,684.10
120EGP 155,578.80
150EGP 194,473.50
180EGP 233,368.20
210EGP 272,262.90
240EGP 311,157.60
270EGP 350,052.30
300EGP 388,947.00
330EGP 427,841.70
360EGP 466,736.40
390EGP 505,631.10
420EGP 544,525.80
450EGP 583,420.50

EGP 38,894.70

EGP 1,296.49 Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 38,894.70
60EGP 77,789.40
90EGP 116,684.10
120EGP 155,578.80
150EGP 194,473.50
180EGP 233,368.20
210EGP 272,262.90
240EGP 311,157.60
270EGP 350,052.30
300EGP 388,947.00
330EGP 427,841.70
360EGP 466,736.40
390EGP 505,631.10
420EGP 544,525.80
450EGP 583,420.50

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.189 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more