SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

RS Stock No.: 202-5488Brand: STMicroelectronicsManufacturers Part No.: SCTW35N65G2VAG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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EGP 1,417.03

EGP 1,417.03 Each (ex VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 1,417.03
2EGP 2,834.06
3EGP 4,251.09
4EGP 5,668.12
5EGP 7,085.15
6EGP 8,502.18
7EGP 9,919.21
8EGP 11,336.24
9EGP 12,753.27
10EGP 14,170.30
11EGP 15,587.33
12EGP 17,004.36
13EGP 18,421.39
14EGP 19,838.42
15EGP 21,255.45

EGP 1,417.03

EGP 1,417.03 Each (ex VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 1,417.03
2EGP 2,834.06
3EGP 4,251.09
4EGP 5,668.12
5EGP 7,085.15
6EGP 8,502.18
7EGP 9,919.21
8EGP 11,336.24
9EGP 12,753.27
10EGP 14,170.30
11EGP 15,587.33
12EGP 17,004.36
13EGP 18,421.39
14EGP 19,838.42
15EGP 21,255.45

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more