STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

RS Stock No.: 202-5479Brand: STMicroelectronicsManufacturers Part No.: SCT50N120
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.59 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

Transistor Material

SiC

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EGP 3,470.18

EGP 3,470.18 Each (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120
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Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 3,470.18
2EGP 6,940.36
3EGP 10,410.54
4EGP 13,880.72
5EGP 17,350.90
6EGP 20,821.08
7EGP 24,291.26
8EGP 27,761.44
9EGP 31,231.62
10EGP 34,701.80
11EGP 38,171.98
12EGP 41,642.16
13EGP 45,112.34
14EGP 48,582.52
15EGP 52,052.70

EGP 3,470.18

EGP 3,470.18 Each (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 3,470.18
2EGP 6,940.36
3EGP 10,410.54
4EGP 13,880.72
5EGP 17,350.90
6EGP 20,821.08
7EGP 24,291.26
8EGP 27,761.44
9EGP 31,231.62
10EGP 34,701.80
11EGP 38,171.98
12EGP 41,642.16
13EGP 45,112.34
14EGP 48,582.52
15EGP 52,052.70

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.59 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more